Virginia TechAli, A.Madan, H. S.Kirk, A. P.Zhao, D. A.Mourey, D. A.Hudait, Mantu K.Wallace, R. M.Jackson, T. N.Bennett, B. R.Boos, J. B.Datta, Suman2014-01-282014-01-282010-10-01Ali, A.; Madan, H. S.; Kirk, A. P.; et al., "Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3," Appl. Phys. Lett. 97, 143502 (2010); http://dx.doi.org/10.1063/1.34928470003-6951http://hdl.handle.net/10919/25171N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2O3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2O3/GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density (D-it) whereas the PEALD Al2O3/GaSb MOSCAPs show unpinned C-V characteristics (low D-it). The reduction in Sb2O3 to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al2O3/GaSb interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492847]application/pdfenIn CopyrightIn-situSubstratePhysicsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/97/14/10.1063/1.3492847https://doi.org/10.1063/1.3492847