Ding, ZikunWang, ZhichaoZhang, BowenLu, Guo-QuanMei, Yun-Hui2022-05-132022-05-132022-05-09Ding, Z.; Wang, Z.; Zhang, B.; Lu, G.-Q.; Mei, Y.-H. A Reliable Way to Improve Electrochemical Migration (ECM) Resistance of Nanosilver Paste as a Bonding Material. Appl. Sci. 2022, 12, 4748.http://hdl.handle.net/10919/110075Electrochemical migration (ECM) of sintered nano-Ag could be a serious reliability concern for power devices with high-density packaging. An anti-ECM nano-Ag-SiO_x paste was proposed by doping 0.1wt% SiO_x nanoparticles rather than previously used expensive noble metals, e.g., palladium. The ECM lifetime of the sintered nano-Ag-SiO_x was 1.5 to 3 times longer than that of the sintered nano-Ag, due to the fact that the SiO_x could protect the Ag from oxidation. The thermo-mechanical reliability of the sintered nano-Ag-SiO_x was also improved by sintering under 5 MPa assisted pressure. The lesser porosity and smaller grain boundaries of the sintered nano-Ag-SiO_x could also be beneficial to retard the silver ECM. In the end, a double-sided semiconductor device was demonstrated to validate the better resistance to the ECM using the sintered nano-Ag-SiO_x.application/pdfenCreative Commons Attribution 4.0 Internationalelectrochemical migrationionic migrationsinteringnanosilverdopingAg nanoparticlesreliabilityArticle - Refereed2022-05-12https://doi.org/10.3390/app12094748