Qin, YuanWang, ZhengpengSasaki, KoheiYe, JiandongZhang, Yuhao2023-06-222023-06-222023-060021-4922SF0801http://hdl.handle.net/10919/115482Benefitted from progress on the large-diameter Ga2O3 wafers and Ga2O3 processing techniques, the Ga2O3 power device technology has witnessed fast advances toward power electronics applications. Recently, reports on large-area (ampere-class) Ga2O3 power devices have emerged globally, and the scope of these works have gone well beyond the bare-die device demonstration into the device packaging, circuit testing, and ruggedness evaluation. These results have placed Ga2O3 in a unique position as the only ultra-wide bandgap semiconductor reaching these indispensable milestones for power device development. This paper presents a timely review on the state-of-the-art of the ampere-class Ga2O3 power devices (current up to >100 A and voltage up to >2000 V), including their static electrical performance, switching characteristics, packaging and thermal management, and the overcurrent/overvoltage ruggedness and reliability. Exciting research opportunities and critical technological gaps are also discussed.application/pdfenCreative Commons Attribution 4.0 Internationalgallium oxidepower electronicspower semiconductor devicespackagingpower converterthermal managementruggednessArticle - Refereedhttps://doi.org/10.35848/1347-4065/acb3d362SF1347-4065