2016-08-242016-08-241998-08-04http://hdl.handle.net/10919/72361A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O.sub.x. A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.application/pdfen-USPatenthttp://pimg-fpiw.uspto.gov/fdd/66/903/057/0.pdf8763011257/295257/306257/E21.011361/305361/311361/313361/322H01L28/605790366