Virginia Tech. Physics DepartmentVirginia Tech. Bradley Department of Electrical and Computer EngineeringKopin CorporationKini, Rajeev N.Nontapot, KanokwanKhodaparast, Giti A.Welser, Roger E.Guido, Louis J.2015-05-212015-05-212008-03-15Kini, R. N., Nontapot, K., Khodaparast, G. A., Welser, R. E., Guido, L. J. (2008). Time resolved measurements of spin and carrier dynamics in InAs films. Journal of Applied Physics, 103(6). doi: 10.1063/1.28990910021-8979http://hdl.handle.net/10919/52388We report time resolved measurements of spin and carrier relaxation in InAs films with carrier densities of 1.3 x 10(16) and 1.6 x 10(16) cm(-3) grown on (001) and (111) GaAs, respectively. We used standard pump-probe and magneto-optical Kerr effect spectroscopy at different excitation wavelengths, power densities, and temperatures. We observed sensitivity of carrier and spin relaxation time to the photoinduced carrier density but not to the variation in temperature. We explain our results using the Elliot-Yafet picture of spin relaxation process in narrow gap semiconductors. (c) 2008 American Institute of Physics.5 pagesapplication/pdfen-USIn CopyrightSpin relaxationIII-V semiconductorsCarrier densityMagnetooptic Kerr effectReflectivityArticle - Refereedhttp://scitation.aip.org/content/aip/journal/jap/103/6/10.1063/1.2899091https://doi.org/10.1063/1.2899091