Ho, V. X.Dao, T. V.Jiang, H. X.Lin, J. Y.Zavada, J. M.McGill, S. A.Vinh, N. Q.2019-01-112019-01-112017-01-052045-232239997http://hdl.handle.net/10919/86671We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 mu m upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN: Er epilayers as an optical gain medium at 1.54 mu m.7application/pdfen-USCreative Commons Attribution 4.0 Internationalearth-doped ganfiber amplifiersimplanted ganexcitationerbiumsisemiconductorssiliconionsArticle - Refereedhttps://doi.org/10.1038/srep39997728054672