Mocevic, SlavkoYu, JianghuiFan, BoranSun, KeyaoXu, YueStewart, JoshuaRong, YuSong, HeMitrovic, VladimirYan, NingWang, JunCvetkovic, IgorBurgos, RolandoBoroyevich, DushanDiMarino, ChristinaDong, DongMotwani, Jayesh KumarZhang, Richard2023-02-222023-02-222022-032771-9197http://hdl.handle.net/10919/113900Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gatedriver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Sibased ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper.Pages 100-113application/pdfenCreative Commons Attribution 4.0 InternationalSiC MOSFETModular multilevel converter (MMC)Switching-cycle control (SCC)Article - Refereed2023-02-22https://doi.org/10.23919/ien.2022.000111Burgos, Rolando [0000-0003-0570-2768]Boroyevich, Dushan [0000-0001-9538-4980]Dimarino, Christina [0000-0001-7369-649X]2771-9197