Virginia TechZhu, Y. F.Zhu, J. S.Song, Yoon J.Desu, Seshu B.2014-02-032014-02-031998-10-01Zhu, YF; Zhu, JS; Song, YJ; et al., "Laser-assisted low temperature processing of Pb(Zr, Ti)O-3 thin film," Appl. Phys. Lett. 73, 1958 (1998); http://dx.doi.org/10.1063/1.1223340003-6951http://hdl.handle.net/10919/25262A method for lowering the processing temperature of PbZr1-xTixO3 films was developed utilizing a laser- assisted two- step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470-550 degrees C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)02640-0].application/pdfen-USIn CopyrightKRF excimer-laserPolycrystalline siliconCrystallizationPhysicsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/73/14/10.1063/1.122334https://doi.org/10.1063/1.122334