2016-08-242016-08-242001-11-13http://hdl.handle.net/10919/72439This invention discloses methods for the deposition of SiO.sub.2 and other oxide dielectric materials using a near room temperature thermal chemical vapor deposition process. The films have chemical, physical, optical, and electrical properties similar to or better than those of oxide films deposited using conventional, high temperature thermal CVD methods. The films of the invention are useful in the manufacture of semiconductor devices of sub-micron feature size and for food packaging.application/pdfen-USPatenthttp://pimg-fpiw.uspto.gov/fdd/55/160/063/0.pdf9302938427/255.28427/255.6438/763438/780438/785438/790C23C16/403C23C16/402C23C16/405C23C16/407C23C16/452Y10T428/316676316055