Virginia TechHoltz, M.Sauncy, T.Dallas, T.Massie, S.2014-05-072014-05-071994-11Holtz, M.; Sauncy, T.; Dallas, T.; Massie, S., "Effect of pressure on defect-related emission in heavily silicon-doped GaAs," Phys. Rev. B 50, 14706(R) DOI: http://dx.doi.org/10.1103/PhysRevB.50.147060163-1829http://hdl.handle.net/10919/47832We report cryogenic high-pressure measurements of a defect-related emission at 1.25 eV in silicon-doped GaAs. The pressure measurements prove that the 1.25-eV photon energy is relative to the conduction band, implying a deep defect level 0.30 eV above the valence band and an electron-capture process from the conduction band into the defect. The defect level moves up in the band gap at a rate of 23±3 meV/GPa. These results are consistent with a vacancy-related defect level, possibly stemming from a gallium-vacancy–silicon-at-gallium (second-nearest-neighbor) defect complex.en-USIn Copyrighthydrostatic-pressuregallium-arsenidedeep donorsdx centerphotoluminescencedependenceel2siphysics, condensed matterArticle - Refereedhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.50.14706https://doi.org/10.1103/PhysRevB.50.14706