Virginia TechWang, ZhiguangLi, YanxiChen, BoViswan, RavindranathLi, JiefangViehland, Dwight D.2014-01-212014-01-212012-09-01Wang, Zhiguang; Li, Yanxi; Chen, Bo; et al., "Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates," Appl. Phys. Lett. 101, 132902 (2012); http://dx.doi.org/10.1063/1.47547130003-6951http://hdl.handle.net/10919/24948We deposited NaNbO3 (NNO)-Nb2O5 (NO) self-assembled heterostructures on LaAlO3 (LAO) to form ferroelectric-semiconductor vertically integrated nanostructures. The NNO component formed as nanorods embedded in a NO matrix. X-ray diffraction confirmed epitaxial growth of both NNO and NO phases. Phase distribution was detected by scanning electron microscopy. The NNO/NO volume ratio was strongly dependent on the deposition temperature due to the volatility of sodium. Piezoelectric force microscopy revealed a good piezoelectric response in the NNO component with a piezoelectric coefficient of D-33 approximate to 12 pm/V, with SrRuO3 (SRO) acting as bottom electrode. The current-voltage characterization of NNO-NO/SRO-LAO showed a typical diode rectifying behavior. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754713]application/pdfen-USIn CopyrightThin filmsNanostructuresStrainPhysicsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/101/13/10.1063/1.4754713https://doi.org/10.1063/1.4754713