Virginia TechHudait, Mantu K.Zhu, Y.Johnston, Steve W.Maurya, DeepamPriya, ShashankUmbel, Rachel2014-01-212014-01-212013-03-01Hudait, M. K.; Zhu, Y.; Johnston, S. W.; et al., "Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy," Appl. Phys. Lett. 102, 093119 (2013); http://dx.doi.org/10.1063/1.47949840003-6951http://hdl.handle.net/10919/24925GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellosung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 mu m GaAs/(100) GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 mu s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794984]application/pdfenIn CopyrightMinority-carrier lifetimeElectronic-structureGaasGESICellsInterfacesImpactPhysicsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/102/9/10.1063/1.4794984https://doi.org/10.1063/1.4794984