Virginia TechKallaher, R. L.Heremans, Jean J.2014-02-112014-02-112009-02-25Kallaher, R. L. ; Heremans, J. J., Feb 2009. "Spin and phase coherence measured by antilocalization in n-InSb thin films," PHYSICAL REVIEW B 79(7): 075322. DOI: 10.1103/PhysRevB.79.0753221098-0121http://hdl.handle.net/10919/25412The spin and phase coherence times of the itinerant electrons in n-InSb thin films were experimentally determined by analyzing the low-temperature magnetoresistance in antilocalization theory. The results indicate a very weak temperature dependence below 10 K for the spin coherence time. The dependence of the spin coherence time on carrier density demonstrates that the Elliott-Yafet mechanism is predominantly responsible for electron-spin relaxation in n-type InSb at low temperatures. The phase coherence time follows an inverse temperature dependence, in accordance with the electron-electron Nyquist dephasing mechanism.en-USIn Copyrightband model of magnetismcarrier densityelectron spin polarisationindium compoundslocalised statesmagnetoresistancenarrow band gapsemiconductorsNyquist criterionsemiconductor thin filmsweak-field magnetoresistanceelectron scatteringlocalizationsemiconductorssurfacesystembehaviorsensorsPhysicsArticle - Refereedhttp://link.aps.org/doi/10.1103/PhysRevB.79.075322https://doi.org/10.1103/PhysRevB.79.075322