Virginia Tech. Department of Materials EngineeringRao, Satish I.Houska, Charles R.2015-05-212015-05-211981Rao, S. I., Houska, C. R. (1981). The measurement of elastic stresses and energy in cubic single‐crystal films by x‐ray diffraction. Journal of Applied Physics, 52(10), 6322-6327. doi: 10.1063/1.3285360021-8979http://hdl.handle.net/10919/52450Anisotropicelasticity calculations have been made for use in conjunction with strain measurements by x‐ray diffraction for sputtered single‐crystal films. Only the cubic case has been treated. Data from InSb films with (100) and (111) orientations on similarly oriented GaAs substrates are given. It was found that nearly alike planar strains ε yield lower planar stresses σ′ 1 and σ′ 2 and stored energy density U for the (100) orientation. The (100) films exhibit a relatively large strain perpendicular to the film ε3.7 pagesapplication/pdfen-USIn CopyrightElasticityIII-V semiconductorsStrain measurementAnisotropySputter depositionArticle - Refereedhttp://scitation.aip.org/content/aip/journal/jap/52/10/10.1063/1.328536https://doi.org/10.1063/1.328536