Virginia Tech. Department of Materials Science and EngineeringNortheastern University. Center for Microwave Magnetic Materials and Integrated CircuitsNortheastern University. Department of Electrical and Computer EngineeringSoochow University. Department of Physics. Jiangsu Key Laboratory of Thin FilmsHu, BolinChen, YajieYang, Aria F.Gillette, Scott M.Fitchorov, TrifonGeiler, Anton L.Daigle, AndrewSu, X. D.Wang, ZhiguangViehland, Dwight D.Harris, Vincent G.2015-05-212015-05-212012-03-15Hu, B., Chen, Y., Yang, A., Gillette, S., Fitchorov, T., Geiler, A., Daigle, A., Su, X. D., Wang, Z., Viehland, D., Harris, V. G. (2012). Epitaxial growth of Pb(Zr0.53Ti0.47)O-3 films on Pt coated magnetostrictive amorphous metallic substrates toward next generation multiferroic heterostructures. Journal of Applied Physics, 111(6). doi: 10.1063/1.36976050021-8979http://hdl.handle.net/10919/52482Piezoelectric films of Pb(Zr0.53Ti0.47)O-3 (PZT) were deposited by pulsed laser deposition onto metallic magnetostrictive substrates. In order to optimize the growth of PZT films, a buffer layer of Pt was employed, as well as variation of deposition temperature, pressure, and laser energy. Room temperature 0-20 x-ray diffraction measurements indicate all diffraction features correspond to reflections indexed to a single PZT phase of space group P4mm. Scanning electron microscopy images reveal pinhole-free dense films of pyramidal shaped crystal arrangements whose orientation and size were controlled by variation of oxygen pressures during deposition. The resulting PZT films had a value of d(33) similar to 46 pm/V representing a 53% increase over previous efforts to realize a piezoelectric/Metglas (TM) film heterostructure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697605]6 pagesapplication/pdfen-USIn CopyrightPZT filmsPiezoelectric transducersThin filmsPiezoelectric fieldsHeterojunctionsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/jap/111/6/10.1063/1.3697605https://doi.org/10.1063/1.3697605