Puli, Venkata SreenivasPradhan, Dhiren KumarSreenivasulu, GollapudiBabu, Simhachalam NarendraPrasad, Nandiraju VenkataMadgula, KalpanaChrisey, Douglas B.Katiyar, Ram S.2021-10-132021-10-132021-09-30Puli, V.S.; Pradhan, D.K.; Sreenivasulu, G.; Babu, S.N.; Prasad, N.V.; Madgula, K.; Chrisey, D.B.; Katiyar, R.S. Magnetoelectric and Multiferroic Properties of BaTiO3/NiFe2O4/BaTiO3 Heterostructured Thin Films Grown by Pulsed Laser Deposition Technique. Crystals 2021, 11, 1192.http://hdl.handle.net/10919/105273Development of lead-free BaTiO₃/NiFe₂O₄/BaTiO₃ (BTO/NFO/BTO) trilayer structure thin films is significant for the realization of eco-friendly and implantable microelectromechanical systems (MEMS)-based devices. In the present work, we report BTO/NFO/BTO trilayer structure as a representative ferroelectric/ferromagnetic/ferroelectric (FE/FM/FE) system deposited on Pt(111)/TiO₂/SiO₂/Si using Pulsed Laser Deposition (PLD) technique. We report the ferroelectric, magnetic, and ME properties of BTO/NFO/BTO trilayer nanoscale heterostructure having dimensions 140/80/140 nm, at room temperature. High room temperature dielectric constant ~2145 at 100 Hz with low dielectric loss ~0.05 at 1 MHz is observed. Further, the deposited (BTO/NFO/BTO) tri-layered thin films showed magnetoelectric, multiferroic behavior with remanent polarization of 8.63 μCcm⁻² at about 0.25 MV/cm and a reasonably high saturation magnetization of ~16 emu/cm³ at ~10 kOe is witnessed at room temperature. Tri-layered films have shown interesting magnetoelectric (ME) coupling coefficient (α_E) ~54.5 mV/cm Oe at room temperature.application/pdfenCreative Commons Attribution 4.0 Internationalpolycrystallinemagnetoelectric couplingmultiferroicsPulsed Laser Depositiontri-layered filmsArticle - Refereed2021-10-12https://doi.org/10.3390/cryst11101192