Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gas

2016-08-242016-08-241995-01-17http://hdl.handle.net/10919/72827A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CHCl.sub.2 CF.sub.3 or CHClFCF.sub.3.application/pdfen-USReactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gasPatenthttp://pimg-fpiw.uspto.gov/fdd/20/823/053/0.pdf8096171216/76257/E21.011257/E21.252257/E21.253257/E21.311438/712438/720H01L28/60H01L21/31116H01L21/31122H01L21/32136H01L31/1884Y02E10/505382320