Virginia TechTrinh, H. D.Chang, E. Y.Wu, P. W.Wong, Y. Y.Chang, C. T.Hsieh, Y. F.Yu, C. C.Nguyen, H. Q.Lin, Y. C.Lin, K. L.Hudait, Mantu K.2014-01-282014-01-282010-07-01Trinh, H. D.; Chang, E. Y.; Wu, P. W.; et al., "The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor," Appl. Phys. Lett. 97, 042903 (2010); http://dx.doi.org/10.1063/1.34678130003-6951http://hdl.handle.net/10919/25200The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]application/pdfenIn CopyrightAluminaAnnealingEnergy gapGallium arsenideIII-V semiconductorsIndium compoundsInterface statesMOS capacitorsSurface treatmentsX-ray photoelectron spectraal2o3PhysicsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/97/4/10.1063/1.3467813https://doi.org/10.1063/1.3467813