Li, Mi-FengYu, YingHe, Ji-FangWang, Li-JuanZhu, YanShang, Xiang-junNi, Hai-QiaoNiu, Zhi-Chuan2013-03-132013-03-132013-02-18Nanoscale Research Letters. 2013 Feb 18;8(1):86http://hdl.handle.net/10919/19283A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.application/pdfenCreative Commons Attribution 4.0 InternationalArticle - Refereed2013-03-13Mi-Feng Li et al.; licensee BioMed Central Ltd.https://doi.org/10.1186/1556-276X-8-86