Virginia TechZhukov, A. E.Kryzhanovskaya, Natalia V.Zubov, Fedor I.Shernyakov, Y. M.Maximov, Mikhail V.Semenova, E. S.Yvind, K.Asryan, Levon V.2014-04-162014-04-162012-01-01Zhukov, Alexey E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.; et al., "Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers," Appl. Phys. Lett. 100, 021107 (2012); http://dx.doi.org/10.1063/1.36760850003-6951http://hdl.handle.net/10919/47384We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference laser structure, our laser with asymmetric barrier layers demonstrates reduced internal optical loss, lower threshold current density at elevated temperatures, and higher characteristic temperature (143 vs. 99K at 20 degrees C). (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676085]application/pdfen-USIn CopyrightQuantum wellsCurrent densityElectrical propertiesAluminumElectronsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/100/2/10.1063/1.3676085https://doi.org/10.1063/1.3676085