Virginia Tech. Bradley Department of Electrical and Computer EngineeringPenn State. Department of Electrical EngineeringPurdue University. Department of Electrical and Computer EngineeringRajamohanan, BijeshMohata, Dheeraj K.Zhu, YanHudait, Mantu K.Jiang, ZhengpingHollander, MatthewKlimeck, GerhardDatta, Suman2015-05-042015-05-042014-01-23Rajamohanan, Bijesh, Mohata, Dheeraj, Zhu, Yan, Hudait, Mantu, Jiang, Zhengping, Hollander, Matthew, Klimeck, Gerhard, Datta, Suman (2014). Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors. Journal of Applied Physics, 115(4). doi: 10.1063/1.48620420021-8979http://hdl.handle.net/10919/51975In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-kappa gate dielectric. HetJ pTFET exhibited drive current of 35 mu A/mu m in comparison to homJ pTFET, which exhibited drive current of 0.3 mu A/mu m at V-DS = -0.5V under DC biasing conditions. Additionally, with pulsing of 1 mu s gate voltage, hetJ pTFET exhibited enhanced drive current of 85 mu A/mu m at V-DS = -0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies. (C) 2014 AIP Publishing LLC.8 pagesapplication/pdfenIn CopyrightIII-V semiconductorsAtomic layer depositionValence bandsGas liquid interfacesConduction bandsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/jap/115/4/10.1063/1.4862042https://doi.org/10.1063/1.4862042