2019-02-262019-02-262017-08-15http://hdl.handle.net/10919/87817In a cascode switching device, avalanche breakdown of a control transistor and loss of soft switching or zero voltage switching in a high voltage normally-on depletion mode transistor having a negative switching threshold voltage and the corresponding losses are avoided by providing additional capacitance in parallel with a parallel connection of drain-source parasitic capacitance of the control transistor and gate-source parasitic capacitance of the high voltage, normally-on transistor to form a capacitive voltage divider with the drain-source parasitic capacitance of the high voltage, normally-on transistor such that the avalanche breakdown voltage of the control transistor cannot be reached. The increased capacitance also assures that the drain source parasitic capacitance of the high voltage, normally-on transistor is fully discharged before internal turn-on can occur.application/pdfenAvoiding internal switching loss in soft switching cascode structure devicePatenthttp://pimg-fpiw.uspto.gov/fdd/38/352/097/0.pdf14471404H01L29/20H01L29/1608H01L29/2003H01L29/7828H02M2001/0058H03K17/102H03K17/567H03K2017/6875H03K2217/0036Y02B70/14919735238