Charged defects in highly emissive organic wide-band-gap semiconductors

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dc.contributorVirginia Techen
dc.contributor.authorList, E. J. W.en
dc.contributor.authorKim, C. H.en
dc.contributor.authorShinar, J.en
dc.contributor.authorPogantsch, A.en
dc.contributor.authorLeising, G.en
dc.contributor.authorGraupner, W.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-01-24en
dc.date.accessioned2014-02-03T15:57:14Zen
dc.date.available2014-02-03T15:57:14Zen
dc.date.issued2000-04en
dc.description.abstractA combined photoluminescence (PL) -detected magnetic-resonance (PLDMR) and thermally stimulated current (TSC) study of defects in wide-band-gap para-phenylene-type semiconductors is described. As TSC probes the density of mobile charge carriers after detrapping and PLDMR reveals the influence of trapped charges on the PL, their combination yields the concentration of traps, their energetic position, and their contribution to PL quenching. The reported trap densities, which are 2 x 10(16) for the polymer and 1 x 10(14) cm(-3), for the oligomer, are the lowest reported for para-phenylene-type materials. (C) 2000 American Institute of Physics. [S0003-6951(00)03615-9].en
dc.identifier.citationList, EJW; Kim, CH; Shinar, J; et al., "Charged defects in highly emissive organic wide-band-gap semiconductors," Appl. Phys. Lett. 76, 2083 (2000); http://dx.doi.org/10.1063/1.126262en
dc.identifier.doihttps://doi.org/10.1063/1.126262en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/25244en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/76/15/10.1063/1.126262en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectlight-emitting-diodesen
dc.subjectconjugated polymersen
dc.subjectladder polymeren
dc.subjectPhysicsen
dc.titleCharged defects in highly emissive organic wide-band-gap semiconductorsen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden

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