Nonlocal ballistic and hydrodynamic transport in two-dimensional electron systems
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Abstract
Electrical transport in materials is typically diffusive, due to dominant momentum-relaxing scattering of carriers with the phonons or defects. In ultraclean material systems such as GaAs/AlGaAs or graphene/hBN heterostructures, momentum-relaxing can be suppressed, leading to the onset of non-diffusive transport regimes, where Ohm's law is no longer valid. Within these non-diffusive regimes, the hydrodynamic regime occurs when momentum-conserving electron-electron scattering length scale is smaller than the device length scale (usually at intermediate temperatures). On the other hand, weak electron-electron scattering (at low temperatures) results in ballistic transport, commonly understood using the familiar single-particle framework of injected carriers travelling in straight line trajectories with intermittent reflections off device boundaries. Both the ballistic and hydrodynamic regimes can exhibit a emph{negative} nonlocal resistance, and collective behaviour such as the formation of current vortices. In this work, we study nonlocal current-voltage characteristics in mesoscopic devices fabricated from a GaAs/AlGaAs heterostructure that hosts a two-dimensional electron system in a GaAs quantum well. First, we report a quadratic non-linearity in the nonlocal current-voltage characteristics that manifests in any device where a nonlocal voltage measurement is possible. Using measurements at low temperatures (