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Virginia Tech Patents

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https://hdl.handle.net/10919/72294

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Browsing Virginia Tech Patents by Author "Agaskar, Pradyot A."

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    Production of films of SiO.sub.2 by chemical vapor deposition
    (United States Patent and Trademark Office, 1997-01-14)
    The chemical vapor deposition of hydridospherosiloxane to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. The chemical vapor deposition process synthesized compounds with the general formula, EQU (HSiO.sub.3/2).sub.n, with n being an even number ranging from 8 to a very large number. More particularly, it relates to the vapor deposition of oligomeric hydrogensilsesquioxanes, henceforth referred to as hydridospherosiloxanes. The hydridospherosiloxanes are used directly in a chemical vapor deposition reactor to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. Hydridospherosiloxanes and soluble hydrogensilsesquioxane resin are produced having the formula EQU (HSiO.sub.3/2).sub.n, where n is an even integer greater than 8.