Scholarly Works, Chemical Engineering
Permanent URI for this collection
Research articles, presentations, and other scholarship
Browse
Browsing Scholarly Works, Chemical Engineering by Author "Ahn, So-Jin"
Now showing 1 - 2 of 2
Results Per Page
Sort Options
- Fabrication and Evaluation of Trimethylmethoxysilane (TMMOS)-Derived Membranes for Gas SeparationMise, Yoshihiro; Ahn, So-Jin; Takagaki, Atsushi; Kikuchi, Ryuji; Oyama, Shigeo Ted (MDPI, 2019-09-20)Gas separation membranes were fabricated with varying trimethylmethoxysilane (TMMOS)/tetraethoxy orthosilicate (TEOS) ratios by a chemical vapor deposition (CVD) method at 650 °C and atmospheric pressure. The membrane had a high H2 permeance of 8.3 × 10−7 mol m−2 s−1 Pa−1 with H2/CH4 selectivity of 140 and H2/C2H6 selectivity of 180 at 300 °C. Fourier transform infrared (FTIR) measurements indicated existence of methyl groups at high preparation temperature (650 °C), which led to a higher hydrothermal stability of the TMMOS-derived membranes than of a pure TEOS-derived membrane. Temperature-dependence measurements of the permeance of various gas species were used to establish a permeation mechanism. It was found that smaller species (He, H2, and Ne) followed a solid-state diffusion model while larger species (N2, CO2, and CH4) followed a gas translational diffusion model.
- Gas Separation Silica Membranes Prepared by Chemical Vapor Deposition of Methyl-Substituted SilanesKato, Harumi; Lundin, Sean-Thomas B.; Ahn, So-Jin; Takagaki, Atsushi; Kikuchi, Ryuji; Oyama, Shigeo Ted (MDPI, 2019-11-03)The effect on the gas permeance properties and structural morphology of the presence of methyl functional groups in a silica membrane was studied. Membranes were synthesized via chemical vapor deposition (CVD) at 650 °C and atmospheric pressure using three silicon compounds with differing numbers of methyl- and methoxy-functional groups: tetramethyl orthosilicate (TMOS), methyltrimethoxysilane (MTMOS), and dimethyldimethoxysilane (DMDMOS). The residence time of the silica precursors in the CVD process was adjusted for each precursor and optimized in terms of gas permeance and ideal gas selectivity criteria. Final H2 permeances at 600 °C for the TMOS-, MTMOS-, and DMDMOS-derived membranes were respectively 1.7 × 10−7, 2.4 × 10−7, and 4.4 × 10−8 mol∙m−2∙s−1∙Pa−1 and H2/N2 selectivities were 990, 740, and 410. The presence of methyl groups in the membranes fabricated with the MTMOS and DMDMOS precursors was confirmed via Fourier-transform infrared (FTIR) spectroscopy. From FTIR analysis, an increasing methyl signal in the silica structure was correlated with both an improvement in the hydrothermal stability and an increase in the apparent activation energy for hydrogen permeation. In addition, the permeation mechanism for several gas species (He, H2, Ne, CO2, N2, and CH4) was determined by fitting the gas permeance temperature dependence to one of three models: solid state, gas-translational, or surface diffusion.