Center for Power Electronics Systems
Permanent URI for this community
Browse
Browsing Center for Power Electronics Systems by Author "Burgos, Rolando"
Now showing 1 - 4 of 4
Results Per Page
Sort Options
- Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converterMocevic, Slavko; Yu, Jianghui; Fan, Boran; Sun, Keyao; Xu, Yue; Stewart, Joshua; Rong, Yu; Song, He; Mitrovic, Vladimir; Yan, Ning; Wang, Jun; Cvetkovic, Igor; Burgos, Rolando; Boroyevich, Dushan; DiMarino, Christina; Dong, Dong; Motwani, Jayesh Kumar; Zhang, Richard (IEEE, 2022-03)Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gatedriver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Sibased ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper.
- Power-cell switching-cycle capacitor voltage control for modular multi-level converters(United States Patent and Trademark Office, 2018-05-08)In a modular multi-level power converter, additional switching states are interleaved between main switching states that control output voltage or waveform. The additional switching states provide current from a DC-link to charge capacitors in respective modules or cells to an offset voltage from which the capacitor voltages are controlled toward a reference voltage during each switching cycle rather than being allowed to build up over a period of an output waveform of variable line frequency, possibly including zero frequency. Since the switching cycle is much shorter than the duration of a line frequency cycle and the capacitor voltages are balanced during each switching cycle, output voltage ripple can be limited as desired with a capacitor of much smaller value and size than would otherwise be required.
- Semiconductor module arrangement(United States Patent and Trademark Office, 2018-07-24)In a switching module structure that includes a low-impedance path to ground, such as a parasitic capacitance of an insulating substrate, a further insulating substrate presenting a parasitic capacitance placed in series with the low impedance current path and a connection of a conductive layer to input voltage rails using a single decoupling capacitor or, preferably, a midpoint of the voltage rails formed by a series connection of decoupling capacitors maintains a large portion of common mode (CM) currents which are due to high dV/dt slew rates of SiC and GaN transistors within the switching module.
- A SiC-Based Liquid-Cooled Electric Vehicle Traction Inverter Operating at High Ambient TemperatureZhang, Chi; Srdic, Srdjan; Lukic, Srdjan; Wang, Jun; Burgos, Rolando (China Power Supply Society, 2022-06-30)This paper describes the design process of a high-power-density 100 kW (34 kW/L) traction inverter for electric vehicles, operating at an ambient temperature of 105 °C. A detailed thermal analysis is performed based on the thermal behavior of the switching devices, and the results are used to estimate the semiconductor device junction temperature and to determine the requirements of the cooling system to achieve the target power level. A high-temperature gate drive board aiming for reliable system operation in electric vehicles is developed. An overcurrent protection scheme based on parasitic inductance between the power source and the Kelvin source of the power module has been implemented. A dc-link decoupling snubber circuit is designed numerically based on a detailed forth-order high-frequency equivalent circuit of a double pulse test circuit. The approach to optimize the snubber circuit, not only for the voltage spike suppression but also for good thermal performance, is proposed. Finally, a hardware prototype with SiC power modules has been built and tested at 60 kW continuous power and 100 kW for 20 seconds at 105 °C ambient temperature and 65 °C inlet coolant temperature.