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Browsing by Author "Han, D. S."

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    Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing
    Han, D. S.; Asryan, Levon V. (AIP Publishing, 2008-06-01)
    We study the optical output power of a semiconductor laser, which exploits tunneling-injection of electrons and holes into quantum dots (QDs) from two separate quantum wells. Even if there is out-tunneling leakage of carriers from QDs, the intensity of parasitic recombination outside QDs remains restricted with increasing injection current. As a result, the light-current characteristic becomes increasingly linear, and the slope efficiency grows closer to unity at high injection currents-a fascinating feature favoring the use of tunneling-injection of both electrons and holes into QDs for high-power lasing. (C) 2008 American Institute of Physics.