Browsing by Author "Sanghadasa, Mohan"

Now showing 1 - 6 of 6
  • Thumbnail Image
    Colossal tunability in high frequency magnetoelectric voltage tunable inductors
    Yan, Yongke; Geng, Liwei D.; Tan, Yaohua; Ma, Jianhua; Zhang, Lujie; Sanghadasa, Mohan; Ngo, Khai D. T.; Ghosh, Avik W.; Wang, Yu U.; Priya, Shashank (2018-11-27)
    The electrical modulation of magnetization through the magnetoelectric effect provides a great opportunity for developing a new generation of tunable electrical components. Magnetoelectric voltage tunable inductors (VTIs) are designed to maximize the electric field control of permeability. In order to meet the need for power electronics, VTIs operating at high frequency with large tunability and low loss are required. Here we demonstrate magnetoelectric VTIs that exhibit remarkable high inductance tunability of over 750% up to 10 MHz, completely covering the frequency range of state-of-the-art power electronics. This breakthrough is achieved based on a concept of magnetocrystalline anisotropy (MCA) cancellation, predicted in a solid solution of nickel ferrite and cobalt ferrite through first-principles calculations. Phase field model simulations are employed to observe the domain-level strain-mediated coupling between magnetization and polarization. The model reveals small MCA facilitates the magnetic domain rotation, resulting in larger permeability sensitivity and inductance tunability.
  • Thumbnail Image
    Correlation between tunability and anisotropy in magnetoelectric voltage tunable inductor (VTI)
    Yan, Yongke; Geng, Liwei D.; Zhang, Lujie; Gao, Xiangyu; Gollapudi, Sreenivasulu; Song, Hyun-Cheol; Dong, Shuxiang; Sanghadasa, Mohan; Ngo, Khai D. T.; Wang, Yu U.; Priya, Shashank (Springer Nature, 2017-11-22)
    Electric field modulation of magnetic properties via magnetoelectric coupling in composite materials is of fundamental and technological importance for realizing tunable energy efficient electronics. Here we provide foundational analysis on magnetoelectric voltage tunable inductor (VTI) that exhibits extremely large inductance tunability of up to 1150% under moderate electric fields. This field dependence of inductance arises from the change of permeability, which correlates with the stress dependence of magnetic anisotropy. Through combination of analytical models that were validated by experimental results, comprehensive understanding of various anisotropies on the tunability of VTI is provided. Results indicate that inclusion of magnetic materials with low magnetocrystalline anisotropy is one of the most effective ways to achieve high VTI tunability. This study opens pathway towards design of tunable circuit components that exhibit field-dependent electronic behavior.
  • Thumbnail Image
    Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection
    Kundu, Souvik; Clavel, Michael B.; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank (Springer Nature, 2015-07-23)
    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO(3) (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb: STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb: STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.
  • Thumbnail Image
    Optimization of segmented thermoelectric generator using Taguchi and ANOVA techniques
    Kishore, Ravi Anant; Sanghadasa, Mohan; Priya, Shashank (Springer Nature, 2017-12-01)
    Recent studies have demonstrated that segmented thermoelectric generators (TEGs) can operate over large thermal gradient and thus provide better performance (reported efficiency up to 11%) as compared to traditional TEGs, comprising of single thermoelectric (TE) material. However, segmented TEGs are still in early stages of development due to the inherent complexity in their design optimization and manufacturability. In this study, we demonstrate physics based numerical techniques along with Analysis of variance (ANOVA) and Taguchi optimization method for optimizing the performance of segmented TEGs. We have considered comprehensive set of design parameters, such as geometrical dimensions of p-n legs, height of segmentation, hot-side temperature, and load resistance, in order to optimize output power and efficiency of segmented TEGs. Using the state-of-the-art TE material properties and appropriate statistical tools, we provide near-optimum TEG configuration with only 25 experiments as compared to 3125 experiments needed by the conventional optimization methods. The effect of environmental factors on the optimization of segmented TEGs is also studied. Taguchi results are validated against the results obtained using traditional full factorial optimization technique and a TEG configuration for simultaneous optimization of power and efficiency is obtained.
  • Thumbnail Image
    Ultra-high performance wearable thermoelectric coolers with less materials
    Kishore, Ravi Anant; Nozariasbmarz, Amin; Poudel, Bed; Sanghadasa, Mohan; Priya, Shashank (Springer Nature, 2019-04-16)
    Thermoelectric coolers are attracting significant attention for replacing age-old cooling and refrigeration devices. Localized cooling by wearable thermoelectric coolers will decrease the usage of traditional systems, thereby reducing global warming and providing savings on energy costs. Since human skin as well as ambient air is a poor conductor of heat, wearable thermoelectric coolers operate under huge thermally resistive environment. The external thermal resistances greatly influence thermoelectric material behavior, device design, and device performance, which presents a fundamental challenge in achieving high efficiency for on-body applications. Here, we examine the combined effect of heat source/sink thermal resistances and thermoelectric material properties on thermoelectric cooler performance. Efficient thermoelectric coolers demonstrated here can cool the human skin up to 8.2 degrees C below the ambient temperature (170% higher cooling than commercial modules). Cost-benefit analysis shows that cooling over material volume for our optimized thermoelectric cooler is 500% higher than that of the commercial modules.
  • Thumbnail Image
    Ultrahigh Durability Perovskite Solar Cells
    Wu, Congcong; Wang, Kai; Feng, Xu; Jiang, Yuanyuan; Yang, Dong; Hou, Yuchen; Yan, Yongke; Sanghadasa, Mohan; Priya, Shashank (American Chemical Society, 2019-01-29)
    Unprecedented conversion efficiency has been demonstrated for perovskite solar cells (PSCs), however, their stability and reliability continue to be challenge. Here, an effective and practical method is demonstrated to overcome the device stability issues in PSCs. A CF4 plasma treatment method is developed that results in the formation of a robust C–Fx layer covering the PSC device, thereby, imparting protection during the operation of solar cell. PSCs exposed to fluorination process showed excellent stability against water, light, and oxygen, displaying relatively no noticeable degradation after being dipped into water for considerable time period. The fluorination process did not have any impact on the morphology and electrical property of the top Spiro-OMeTAD layer, resulting in a conversion efficiency of 18.7%, which is identical to that of the pristine PSC. Under the continuous Xe lamp (AM 1.5G, 1 sun) illumination in ambient air for 100 h, the fluorinated PSCs demonstrated 70% of initial conversion efficiency, which is 4000% higher than that of the pristine PSC devices. We believe this breakthrough will have significant impact on the transition of PSCs into real world applications.