Browsing by Author "Wang, Li-Juan"

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    In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
    Li, Mi-Feng; Yu, Ying; He, Ji-Fang; Wang, Li-Juan; Zhu, Yan; Shang, Xiang-jun; Ni, Hai-Qiao; Niu, Zhi-Chuan (2013-02-18)
    A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.