Browsing by Author "Xie, Qingyun"

Now showing 1 - 1 of 1
  • Thumbnail Image
    1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier
    Qin, Yuan; Xiao, Ming; Zhang, Ruizhe; Xie, Qingyun; Palacios, Tomás; Wang, Boyan; Ma, Yunwei; Kravchenko, Ivan; Briggs, Dayrl P.; Hensley, Dale K.; Srijanto, Bernadeta R.; Zhang, Yuhao (IEEE, 2023-07)
    This work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 m ·cm2. Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.