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Browsing by Author "Xie, Y."

Now showing 1 - 3 of 3
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    Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer
    Liu, J. S.; Clavel, Michael B.; Pandey, R.; Datta, Suman; Xie, Y.; Heremans, Jean J.; Hudait, Mantu K. (AIP Publishing, 2018-10-08)
    An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecular beam epitaxy using a 200 nm strained GaAs1-ySby dislocation filtering buffer. X-ray analysis demonstrated near complete strain relaxation of the metamorphic buffer and a quasi-lattice-matched InAs/GaSb heterostructure, while high-resolution transmission electron microscopy revealed sharp, atomically abrupt heterointerfaces between the GaSb and InAs epilayers. In-plane magnetotransport analysis revealed Shubnikov-de Haas oscillations, indicating the presence of a dominant high mobility carrier, thereby testifying to the quality of the heterostructure and interfaces. Temperature-dependent current-voltage characteristics of fabricated InAs/GaSb tunnel diodes demonstrated Shockley-Read-Hall generation-recombination at low bias and band-to-band tunneling transport at high bias. The extracted conductance slope from the fabricated tunnel diodes increased with increasing temperature due to thermal emission (Ea ~ 0.48 eV) and trap-assisted tunneling. Thus, this work illustrates the significance of defect control in the heterointegration of metamorphic InAs/GaSb tunnel diode heterostructures on silicon when using GaAs1-ySby dislocation filtering buffers.
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    Measurement of isotopic separation of argon with the prototype of the cryogenic distillation plant Aria for dark matter searches
    Aaron, E.; Agnes, P.; Ahmad, I.; Albergo, S.; Albuquerque, I. F. M.; Alexander, T.; Alton, A. K.; Amaudruz, P.; Atzori Corona, M.; Ave, M.; Avetisov, I. C.; Azzolini, O.; Back, H. O.; Balmforth, Z.; Barrado, A.; Barrillon, P.; Basco, A.; Batignani, G.; Bocci, V.; Bonivento, W. M.; Bottino, B.; Boulay, M. G.; Busto, J.; Cadeddu, M.; Caminata, A.; Canci, N.; Capra, A.; Caprioli, S.; Caravati, M.; Cargioli, N.; Carlini, M.; Castello, P.; Cavalcante, P.; Cavuoti, S.; Cebrian, S.; Cela Ruiz, J. M.; Chashin, S.; Chepurnov, A.; Chyhyrynets, E.; Cifarelli, L.; Cintas, D.; Citterio, M.; Cleveland, B.; Cocco, V.; Conde Vilda, E.; Consiglio, L.; Copello, S.; Covone, G.; Czubak, M.; D’Aniello, M.; D’Auria, S.; Da Rocha Rolo, M. D.; Davini, S.; De Cecco, S.; De Guido, G.; De Gruttola, D.; De Pasquale, S.; De Rosa, G.; Dellacasa, G.; Derbin, A. V.; Devoto, A.; Di Capua, F.; Di Noto, L.; Di Stefano, P.; Dolganov, G.; Dordei, F.; Ellingwood, E.; Erjavec, T.; Farenzena, S.; Fernandez Diaz, M.; Fiorillo, G.; Franchini, P.; Franco, D.; Funicello, N.; Gabriele, F.; Gahan, D.; Galbiati, C.; Gallina, G.; Gallus, G.; Garbini, M.; Garcia Abia, P.; Gendotti, A.; Ghiano, C.; Giganti, C.; Giovanetti, G. K.; Goicoechea Casanueva, V.; Gola, A.; Grauso, G.; Grilli di Cortona, G.; Grobov, A.; Gromov, M.; Guan, M.; Guerzoni, M.; Gulino, M.; Guo, C.; Hackett, B. R.; Hallin, A. L.; Hamer, A.; Haranczyk, M.; Hessel, T.; Hill, S.; Horikawa, S.; Hubaut, F.; Hucker, J.; Hugues, T.; Ianni, An.; Ippolito, V.; Jillings, C.; Jois, S.; Kachru, P.; Kemp, A. A.; Kendziora, C. L.; Kimura, M.; Kochanek, I.; Kondo, K.; Korga, G.; Koulosousas, S.; Kubankin, A.; Kuss, M.; Kuźniak, M.; La Commara, M.; Lai, M.; Lami, N.; Le Guirriec, E.; Leason, E.; Leoni, A.; Lidey, L.; Lippi, F.; Lissia, M.; Luzzi, L.; Lychagina, O.; Maccioni, N.; Macfadyen, O.; Machulin, I. N.; Manecki, S.; Manthos, I.; Mapelli, L.; Margotti, A.; Mari, S. M.; Mariani, Camillo; Maricic, J.; Marini, A.; Martínez, M.; Martoff, C. J.; Mascia, M.; Masoni, A.; Matteucci, G.; Mavrokoridis, K.; Maxia, C.; McDonald, A. B.; Messina, A.; Milincic, R.; Mitra, A.; Moharana, A.; Moioli, S.; Monroe, J.; Moretti, E.; Morrocchi, M.; Mróz, T.; Muratova, V. N.; Muscas, C.; Musico, P.; Nania, R.; Nessi, M.; Nikolopoulos, K.; Nowak, J.; Olchansky, K.; Oleinik, A.; Oleynikov, V.; Organtini, P.; de Solórzano, A. O.; Pagani, L.; Pallavicini, M.; Pandola, L.; Pantic, E.; Paoloni, E.; Paternoster, G.; Pegoraro, P. A.; Pelczar, K.; Pellegrini, L. A.; Pellegrino, C.; Pesudo, V.; Piacentini, S.; Pietrofaccia, L.; Pino, N.; Pocar, A.; Poehlmann, D. M.; Pordes, S.; Pralavorio, P.; Price, D.; Ragusa, F.; Ramachers, Y.; Razeti, M.; Renshaw, A. L.; Rescigno, M.; Retiere, F.; Rignanese, L. P.; Ripoli, C.; Rivetti, A.; Roberts, A.; Roberts, C.; Rode, J.; Rogers, G.; Romero, L.; Rossi, M.; Rubbia, A.; Sabia, M. A.; Sabiu, G. M.; Salomone, P.; Sandford, E.; Sanfilippo, S.; Santone, D.; Santorelli, R.; Savarese, C.; Scapparone, E.; Schillaci, G.; Schukman, F.; Scioli, G.; Simeone, M.; Skensved, P.; Skorokhvatov, M. D.; Smirnov, O.; Smirnova, T.; Smith, B.; Spadoni, F.; Spangenberg, M.; Stefanizzi, R.; Steri, A.; Stornelli, V.; Stracka, S.; Stringer, M.; Sulis, S.; Sung, A.; Suvorov, Y.; Szelc, A. M.; Tartaglia, R.; Taylor, A.; Taylor, J.; Tedesco, S.; Testera, G.; Thieme, K.; Thorpe, T. N.; Tonazzo, A.; Tricomi, A.; Unzhakov, E. V.; Vallivilayil John, T.; Van Uffelen, M.; Viant, T.; Viel, S.; Vogelaar, R. Bruce; Vossebeld, J.; Wada, M.; Walczak, M. B.; Wang, H.; Wang, Y.; Westerdale, S.; Williams, L.; Wingerter-Seez, I.; Wojaczyński, R.; Wojcik, Ma. M.; Wright, T.; Xie, Y.; Yang, C.; Zabihi, A.; Zakhary, P.; Zani, A.; Zichichi, A.; Zuzel, G.; Zykova, M. P. (2023-05-31)
    The Aria cryogenic distillation plant, located in Sardinia, Italy, is a key component of the DarkSide-20k experimental program for WIMP dark matter searches at the INFN Laboratori Nazionali del Gran Sasso, Italy. Aria is designed to purify the argon, extracted from underground wells in Colorado, USA, and used as the DarkSide-20k target material, to detector-grade quality. In this paper, we report the first measurement of argon isotopic separation by distillation with the 26m tall Aria prototype. We discuss the measurement of the operating parameters of the column and the observation of the simultaneous separation of the three stable argon isotopes: 36Ar, 38Ar, and 40Ar. We also provide a detailed comparison of the experimental results with commercial process simulation software. This measurement of isotopic separation of argon is a significant achievement for the project, building on the success of the initial demonstration of isotopic separation of nitrogen using the same equipment in 2019.
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    Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium
    Clavel, Michael B.; Murphy-Armando, F.; Xie, Y.; Henry, K.; Kuhn, M.; Bodnar, Robert J.; Khodaparast, Giti; Smirnov, D.; Heremans, Jean; Hudait, Mantu K. (American Physical Society, 2022-12-01)
    As forward-looking electron devices increasingly adopt high-mobility low-band-gap materials, such as germanium (Ge), questions remain regarding the feasibility of strain engineering in low-band-gap systems. Particularly, the Ge L-Γ valley separation (∼150 meV) can be overcome by introducing a high degree of tensile strain (ε ≥ 1.5%). It is therefore essential to understand the nature of highly strained Ge transport, wherein multivalley electron conduction becomes a possibility. Here, we report on the competitiveness between L- and Γ-valley transport in highly tensile-strained (ε ∼ 1.6%) Ge/In0.24Ga0.76As heterostructures. Temperature-dependent magnetotransport analysis reveals two contributing carrier populations, identified as lower- and higher-mobility L- and Γ-valley electrons (in Ge), using temperature-dependent Boltzmann transport modeling. Coupling this interpretation with electron-cyclotron-resonance studies, the effective mass (m*) of the higher-mobility Γ-valley electrons is probed, revealing m* = (0.049 ± 0.007)me. Moreover, a comparison of empirical and theoretical m* indicates that these electrons reside primarily in the first-two quantum sublevels of the Ge Γ valley. Consequently, our results provide an insight into the strain-dependent carrier dynamics of Ge, offering alternative pathways toward efficacious strain engineering.