Browsing by Author "Yang, Xin"

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    Dynamic RON Free 1.2 kV Vertical GaN JFET
    Yang, Xin; Zhang, Ruizhe; Wang, Bixuan; Song, Qihao; Walker, Andy; Pidaparthi, Subhash; Drowley, Cliff; Zhang, Yuhao (IEEE, 2024)
    Dynamic on-resistance (RON) or threshold voltage (VTH) instability caused by charge trapping is one of the most crucial reliability concerns of some GaN high-electron mobility transistors (HEMTs). It has been unclear if this issue can be resolved using an alternative GaN device architecture. This work answers this question by characterizing, for the first time, the dynamic RON and VTH stability of an industrial vertical GaN transistor-NexGen’s 1200V/70mΩ fin-channel JFET, fabricated on 100 mm bulk GaN substrates. A circuit setup is deployed for the in-situ measurement of the dynamic RON under steady-state switching. The longer-term stability of RON and VTH is tested under the prolonged stress of negative gate bias and high drain bias. The vertical GaN JFET shows nearly no RON or VTH shift in these tests, which could be attributed to the low defect density of the GaN-on-GaN homoepitaxial growth, the absence of electric field crowding near the surface, and the minimal charge trapping in the native junction gate. These results present a critical milestone for vertical GaN devices towards power electronics applications.
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    Encryption of 3D Point Cloud Object with Deformed Fringe
    Yang, Xin; Zhang, Hongbo (Hindawi, 2016-02-15)
    A 3D point cloud object encryption method was proposed with this study. With the method, a mapping relationship between 3D coordinates was formulated and coordinate was transformed to deformed fringe by a phase coding method. The deformed fringe and gray image were used for encryption and decryption with simulated off-axis digital Fresnel hologram. Results indicated that the proposed method is able to accurately decrypt the coordinates and gray image of the 3D object. The method is also robust against occlusion attacks.