Browsing by Author "Zhou, Y."

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    Fatigue mechanism of textured Pb(Mg1/3Nb2/3)O-3-PbTiO3 ceramics
    Yan, Y. K.; Zhou, Y.; Gupta, Sanjay; Priya, Shashank (AIP Publishing, 2013-08-01)
    Grain orientation, BaTiO3 heterogeneous template content, and electrode materials are expected to play an important role in controlling the polarization fatigue behavior of < 001 > textured Pb(Mg1/3Nb2/3)O-3-PbTiO3 ceramics. A comparative analysis with randomly oriented ceramics showed that < 001 > grain orientation/texture exhibits improved fatigue characteristics due to the reduced switching activation energy and high domain mobility. The hypothesis was validated from the systematic characterization of polarization-electric field behavior and domain wall density. The defect accumulation at the grain boundary and clamping effect arising from the presence of BaTiO3 heterogeneous template in the final microstructure was found to be the main cause for polarization degradation in textured ceramic. (C) 2013 AIP Publishing LLC.
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    Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge
    Hudait, Mantu K.; Zhu, Yizheng; Jain, Nikhil; Maurya, Deepam; Zhou, Y.; Priya, Shashank (American Institute of Physics, 2013-07-14)
    Growth, structural, and band alignment properties of pulsed laser deposited amorphous BaTiO3 on epitaxial molecular beam epitaxy grown (110) Ge layer, as well as their utilization in low power transistor are reported. High-resolution x-ray diffraction demonstrated quasi-zero lattice mismatch of BaTiO3 on (110) Ge. Cross-sectional transmission electron microscopy micrograph confirms the amorphous nature of BaTiO3 layer as well as shows a sharp heterointerface between BaTiO3 and Ge with no traceable interfacial layer. The valence band offset, Delta E-v, of 1.99 +/- 0.05 eV at the BaTiO3/(110) Ge heterointerface is measured using x-ray photoelectron spectroscopy. The conduction band offset, Delta E-c, of 1.14 +/- 0.1 eV is calculated using the bandgap energies of BaTiO3 of 3.8 eV and Ge of 0.67 eV. These band offset parameters for carrier confinement and the interface chemical properties of the BaTiO3/(110) Ge system are significant advancement towards designing Ge-based p-and n-channel metal-oxide semiconductor field-effect transistors for low-power application. (C) 2013 AIP Publishing LLC.