Browsing by Author "Zhu, Y. F."

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    Laser-assisted low temperature processing of Pb(Zr, Ti)O-3 thin film
    Zhu, Y. F.; Zhu, J. S.; Song, Yoon J.; Desu, Seshu B. (AIP Publishing, 1998-10-01)
    A method for lowering the processing temperature of PbZr1-xTixO3 films was developed utilizing a laser- assisted two- step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470-550 degrees C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)02640-0].
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    Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films
    Li, T. K.; Zhu, Y. F.; Desu, Seshu B.; Peng, C. H.; Nagata, M. (AIP Publishing, 1996-01-01)
    Ferroelectric layered-oxides SrBi2Ta2O9 thin films were prepared on Pt coated Si wafers and single-crystal sapphire by metalorganic chemical vapor deposition (MOCVD). The films were specular and crack-free and showed complete crystallization at temperatures between 650 and 700 degrees C. Good ferroelectric properties were obtained for a 200 nm thick film with Pt electrodes: 2P(r) and E(c) were about 8.3 mu C/cm(2) and 60 kV/cm, respectively. The leakage currents were as low as 8 X 10(-9) A/cm(2) at 150 kV/cm. The films also showed fatigue-free characteristics: no fatigue was observed up to 1.4 X 10(10) switching cycles. These high quality MOCVD films make high-intensity (>1 Mbit) nonvolatile memory devices possible. (C) 1996 American Institute of Physics.