Scholarly Works, Materials Science and Engineering (MSE)
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Browsing Scholarly Works, Materials Science and Engineering (MSE) by Content Type "Patent"
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- Maximum power point tracking for solar panels(United States Patent and Trademark Office, 2017-06-20)Approximately one-half of the loss of delivered power from a solar panel having photovoltaic (PV) cells connected in series to form sub-panels due to shading is recovered at low hardware cost by connecting sub-panels in series and providing maximum power point tracking control in common for the series connected sub-panels such that the respective sub-panels produce equal voltages even in the presence of shading of a portion of one or more sub-panels. By doing so, the input voltage of respective power converters which control the voltage at which each sub-panel is operated can be placed close to the maximum power point of each sub-panel regardless of shading and maximum total power harvested even though the respective sub-panels are not operated at optimum voltages.
- Metalorganic chemical vapor deposition of layered structure oxides(United States Patent and Trademark Office, 1996-06-18)A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system. The ferroelectric films can be used for device applications such as in capacitors, dielectric resonators, heat sensors, transducers, actuators, nonvolatile memories, optical waveguides and displays.
- Method of forming multilayered electrodes for ferroelectric devices consisting of conductive layers and interlayers formed by chemical reaction(United States Patent and Trademark Office, 1996-02-13)A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuO.sub.x, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate (PZT) is deposited on the bottom electrode, and a conducting interlayer is formed at the interface between the ferroelectric and the electrode. This interlayer is created by reaction between the materials of the ferroelectric and electrode, and in this case would be Pb.sub.2 Ru.sub.2 O.sub.7-x. A conductive top layer is deposited over the ferroelectric. This top layer may be a metal, or it may be the same type of materials as the bottom electrode, in which case another interlayer can be formed at the interface. A device constructed in this manner has the property of lower degradation due to fatigue, breakdown, and aging.
- Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films(United States Patent and Trademark Office, 1996-03-05)A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CClF.sub.2 or CHClFCF.sub.3.