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dc.contributorVirginia Techen_US
dc.contributor.authorLee, K. B.en_US
dc.contributor.authorTirumala, S.en_US
dc.contributor.authorDesu, Seshu B.en_US
dc.date.accessioned2014-02-03T15:57:16Z
dc.date.available2014-02-03T15:57:16Z
dc.date.issued1999-03-01
dc.identifier.citationLee, KB; Tirumala, S; Desu, SB, "Highly c-axis oriented Pb(Zr,Ti)O-3 thin films grown on Ir electrode barrier and their electrical properties," Appl. Phys. Lett. 74, 1484 (1999); http://dx.doi.org/10.1063/1.123588
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/25259
dc.description.abstractWe have investigated the structural and electrical properties of sol-gel derived Pb(Zr, Ti)O-3 (PZT) thin films deposited on Ir electrode barrier (Ir/poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis oriented perovskite PZT thin films were obtained for the postdeposition annealing temperature of 580 degrees C. Additionally, we found that the ferroelectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electrodes, which could be due to the enhanced reaction of IrO2 with PZT by the oxygen ion bombardments. Remanent polarization and coercive field of IrO2/PZT/Ir/poly-Si capacitor with the top electrodes deposited at P-O2 = 1 mTorr was 20 mu C/cm(2) and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 10(11) switching repetitions. The leakage current density at a field of 80 kV was 5 X 10(-8) A/ cm(2). (C) 1999 American Institute of Physics. [S0003-6951(99)01510-7].
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectPhysicsen_US
dc.titleHighly c-axis oriented Pb(Zr,Ti)O-3 thin films grown on Ir electrode barrier and their electrical propertiesen_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/74/10/10.1063/1.123588
dc.date.accessed2014-01-24
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.123588
dc.type.dcmitypeTexten_US


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