Now showing items 1-4 of 4
A new method for achieving enhanced dielectric response over a wide temperature range
(Springer Nature, 2015-10-19)
We report a novel approach for achieving high dielectric response over a wide temperature range. In this approach, multilayer ceramic heterostructures with constituent compositions having strategically tuned Curie points ...
Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications
(Nature Publishing Group, 2015-02-16)
We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x 5 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), ...
Giant strain with ultra-low hysteresis and high temperature stability in grain oriented lead-free K0.5Bi0.5TiO3-BaTiO3-Na0.5Bi0.5TiO3 piezoelectric materials
(Springer Nature, 2015-02-26)
We synthesized grain-oriented lead-free piezoelectric materials in (K0.5Bi0.5TiO3-BaTiO3-xNa(0.5)Bi(0.5)TiO(3) (KBT-BT-NBT) system with high degree of texturing along the c (c-cubic) crystallographic orientation. We ...
Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection
(Springer Nature, 2015-07-23)
We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO(3) (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb: ...