A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heating the substrate, exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2, thereafter exposing the substrate to precursors including at least TiO(C.sub.2 H.sub.5).sub.4 and thereafter exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2.