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dc.date.accessioned2016-08-24T17:54:03Zen
dc.date.available2016-08-24T17:54:03Zen
dc.date.issued1999-03-23en
dc.identifier.urihttp://hdl.handle.net/10919/72384en
dc.description.abstractA resonant via-type connection between layers of a multilayer support structure having, at predetermined RF frequencies, a very low, effectively short circuit impedance. The resonant vias utilize the inductance of a via post by forming it into a resonant circuit with a capacitance at the via's distal end coupled to another conductor. A plurality of resonant vias can be formed having respective plurality of resonant frequencies to form a wideband connection. The capacitances at the vias' distal ends coupling to another conductor can be formed to resonate with the total series inductance of the via post and of wire connections to an attached device.en
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.titleCircuit structure including RF/wideband resonant viasen
dc.typePatenten
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/97/865/058/0.pdfen
dc.date.accessed2016-08-19en
dc.type.dcmitypeTexten
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorRiad, Sedki M.en
dc.date.filed1997-03-28en
dc.identifier.applicationnumber8825382en
dc.subject.uspc174/250en
dc.subject.uspcother333/245en
dc.subject.uspcother333/219en
dc.subject.uspcother333/247en
dc.subject.uspcother361/734en
dc.subject.cpcH01P3/088en
dc.subject.cpcH05K1/0224en
dc.subject.cpcH05K1/0239en
dc.subject.cpcH05K1/025en
dc.subject.cpcH05K1/162en
dc.subject.cpcH05K1/112en
dc.subject.cpcH05K1/115en
dc.subject.cpcH05K2201/09318en
dc.type.patenttypeutilityen
dc.identifier.patentnumber5886597en


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