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dc.date.accessioned2016-08-24T17:54:03Z
dc.date.available2016-08-24T17:54:03Z
dc.date.issued1999-03-23
dc.identifier.urihttp://hdl.handle.net/10919/72384
dc.description.abstractA resonant via-type connection between layers of a multilayer support structure having, at predetermined RF frequencies, a very low, effectively short circuit impedance. The resonant vias utilize the inductance of a via post by forming it into a resonant circuit with a capacitance at the via's distal end coupled to another conductor. A plurality of resonant vias can be formed having respective plurality of resonant frequencies to form a wideband connection. The capacitances at the vias' distal ends coupling to another conductor can be formed to resonate with the total series inductance of the via post and of wire connections to an attached device.
dc.format.mimetypeapplication/pdf
dc.languageen_US
dc.publisherUnited States Patent and Trademark Office
dc.titleCircuit structure including RF/wideband resonant vias
dc.typePatent
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/97/865/058/0.pdf
dc.date.accessed2016-08-19
dc.type.dcmitypeText
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.
dc.contributor.inventorRiad, Sedki M.
dc.date.filed1997-03-28
dc.identifier.applicationnumber8825382
dc.subject.uspc174/250
dc.subject.uspcother333/245
dc.subject.uspcother333/219
dc.subject.uspcother333/247
dc.subject.uspcother361/734
dc.subject.cpcH01P3/088
dc.subject.cpcH05K1/0224
dc.subject.cpcH05K1/0239
dc.subject.cpcH05K1/025
dc.subject.cpcH05K1/162
dc.subject.cpcH05K1/112
dc.subject.cpcH05K1/115
dc.subject.cpcH05K2201/09318
dc.type.patenttypeutility
dc.identifier.patentnumber5886597


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