Show simple item record

dc.contributor.authorKang, Yuhongen
dc.contributor.authorRuan, Hangen
dc.contributor.authorClaus, Richard O.en
dc.contributor.authorHeremans, Jean J.en
dc.contributor.authorOrlowski, Mariusen
dc.description.abstractQuantized conductance is observed at zero magnetic field and room temperature in metal-insulator-metal structures with graphene submicron-sized nanoplatelets embedded in a 3-hexylthiophene (P3HT) polymer layer. In devices with medium concentration of graphene platelets, integer multiples of Go = 2e2/h (=12.91 kΩ−1), and in some devices partially quantized including a series of with (n/7) × Go, steps are observed. Such an organic memory device exhibits reliable memory operation with an on/off ratio of more than 10. We attribute the quantized conductance to the existence of a 1-D electron waveguide along the conductive path. The partial quantized conductance results likely from imperfect transmission coefficient due to impedance mismatch of the first waveguide modes.en
dc.description.sponsorshipUS Air Forceen
dc.description.sponsorshipUSAF: FA9453-14-M-005en
dc.rightsCreative Commons Attribution 3.0 United Statesen
dc.subjectGraphene nanoribbonsen
dc.subjectPartial and integer quantum conductanceen
dc.subjectElectron waveguideen
dc.subjectTransmission coefficienten
dc.subjectResistive memoryen
dc.titleObservation of Quantized and Partial Quantized Conductance in Polymer- Suspended Graphene Nanoplateletsen
dc.typeArticle - Refereeden
dc.contributor.departmentElectrical and Computer Engineeringen
dc.title.serialNanoscale Research Lettersen

Files in this item


This item appears in the following Collection(s)

Show simple item record

Creative Commons Attribution 3.0 United States
License: Creative Commons Attribution 3.0 United States