Diode-assisted gate turn-off thyristor

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dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorLi, Yuxinen
dc.contributor.inventorHuang, Alex Q.en
dc.contributor.inventorMotto, Kevinen
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:54:18Zen
dc.date.available2016-08-24T17:54:18Zen
dc.date.filed2000-11-09en
dc.date.issued2002-07-30en
dc.description.abstractA gate-controlled switch includes a gate turn-off thyristor in series with a diode. By using the diode in series with the GTO, the switch significantly increases the turn-off voltage that can be used for the current commutation. The unity turn-off gain and the snubberless turn-off capability are demonstrated.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber9708505en
dc.identifier.patentnumber6426666en
dc.identifier.urihttp://hdl.handle.net/10919/72451en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/66/266/064/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcH03K17/0403en
dc.subject.cpcH03K17/732en
dc.subject.uspc327/438en
dc.subject.uspcother327/440en
dc.titleDiode-assisted gate turn-off thyristoren
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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