Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

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dc.contributorVirginia Tech. Department of Materials Science and Engineeringen
dc.contributor.authorJoshi, Pooran C.en
dc.contributor.authorDesu, Seshu B.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T19:47:27Zen
dc.date.available2015-05-21T19:47:27Zen
dc.date.issued1996-08-15en
dc.description.abstractPolycrystalline Bi4Ti3O12 thin films having layered perovskite structure were fabricated by metalorganic solution deposition technique on both Pt-coated Si and bare Si substrates at a temperature as low as 500 degrees C. The effects of post-deposition rapid thermal annealing on the structural and electrical properties were analyzed. The electrical measurements were conducted on metal-ferroelectric-metal capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 184 and 0.018 and the remanent polarization and the coercive field were 4.4 mu C/cm(2) and 84 kV/cm, respectively. The films exhibited high resistivity in the range 10(8)-10(12) Omega cm for films annealed at temperatures of 500-700 degrees C for 10 s. The I-V characteristics were found to be Ohmic at low fields and space-charge-limited at high fields. A V-3/2 dependence of the current was observed in the space-charge region. This could be explained by assuming the mobility to be field dependent since in thin films the electric fields are invariably high even at low applied voltages. (C) 1996 American Institute of Physics.en
dc.format.extent10 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationJoshi, P. C., Desu, S. B. (1996). Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique. Journal of Applied Physics, 80(4), 2349-2357. doi: 10.1063/1.363069en
dc.identifier.doihttps://doi.org/10.1063/1.363069en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52446en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/80/4/10.1063/1.363069en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectLiquid phase depositionen
dc.subjectThin film structureen
dc.subjectFerroelectric thin filmsen
dc.subjectElectric measurementsen
dc.subjectElectrical propertiesen
dc.titleStructural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition techniqueen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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