Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films

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dc.contributor.assigneeCedraeus Incorporateden
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.assigneeSharp Kabushiki Kaishaen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorPan, Weien
dc.contributor.inventorVijay, Dilip P.en
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:53:45Zen
dc.date.available2016-08-24T17:53:45Zen
dc.date.filed1993-06-10en
dc.date.issued1996-03-05en
dc.description.abstractA method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CClF.sub.2 or CHClFCF.sub.3.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber8075059en
dc.identifier.patentnumber5496437en
dc.identifier.urihttp://hdl.handle.net/10919/72309en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/37/964/054/0.pdfen
dc.language.isoenen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcH01L28/60en
dc.subject.cpcH01L21/31116en
dc.subject.cpcH01L21/31122en
dc.subject.cpcH01L21/32136en
dc.subject.cpcH01L31/1884en
dc.subject.cpcY02E10/50en
dc.subject.uspc216/6en
dc.subject.uspcother216/76en
dc.subject.uspcother257/E21.011en
dc.subject.uspcother257/E21.252en
dc.subject.uspcother257/E21.253en
dc.subject.uspcother257/E21.311en
dc.subject.uspcother438/3en
dc.subject.uspcother438/722en
dc.titleReactive ion etching of lead zirconate titanate and ruthenium oxide thin filmsen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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