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Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

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dc.contributor.authorKundu, Souviken
dc.contributor.authorClavel, Michael B.en
dc.contributor.authorBiswas, Pranaben
dc.contributor.authorChen, Boen
dc.contributor.authorSong, Hyun-Cheolen
dc.contributor.authorKumar, Prashanten
dc.contributor.authorHalder, Nripendra N.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorBanerji, Pallaben
dc.contributor.authorSanghadasa, Mohanen
dc.contributor.authorPriya, Shashanken
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentCenter for Energy Harvesting Materials and Systems (CEHMS)en
dc.date.accessioned2019-01-25T15:47:46Zen
dc.date.available2019-01-25T15:47:46Zen
dc.date.issued2015-07-23en
dc.description.abstractWe report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO(3) (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb: STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb: STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.en
dc.description.notesS.K, B.C, H.-C.S, and P.K acknowledge NSF INAMM program for financial support. S.K would like to thank ICTAS NCFL for providing characterization facilities. M.C acknowledges the final support from NSF ECCS-1348653. S.P acknowledges the partial support through office of basic energy science, Department of Energy (DE-FG02-06ER46290). S.K also acknowledges Dr. Zhou for providing PFM training and ferroelectric target preparations and G. Ghosh for some technical helps.en
dc.description.sponsorshipNSF [ECCS-1348653]; office of basic energy science, Department of Energy [DE-FG02-06ER46290]en
dc.format.extent14en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1038/srep12415en
dc.identifier.issn2045-2322en
dc.identifier.other12415en
dc.identifier.pmid26202946en
dc.identifier.urihttp://hdl.handle.net/10919/86893en
dc.identifier.volume5en
dc.language.isoenen
dc.publisherSpringer Natureen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectthin-filmsen
dc.subjectpolarizationen
dc.subjectdevicesen
dc.subjectdiodeen
dc.titleLead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detectionen
dc.title.serialScientific Reportsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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