Deposition conditions and electrical properties of relaxor ferroelectric Pb(Fe1/2Nb1/2)O-3 thin films prepared by pulsed laser deposition
dc.contributor | Virginia Tech. Department of Materials Science and Engineering | en |
dc.contributor.author | Yan, Li | en |
dc.contributor.author | Li, Jiefang | en |
dc.contributor.author | Viehland, Dwight D. | en |
dc.contributor.department | Materials Science and Engineering (MSE) | en |
dc.date.accessed | 2015-04-24 | en |
dc.date.accessioned | 2015-05-21T19:47:24Z | en |
dc.date.available | 2015-05-21T19:47:24Z | en |
dc.date.issued | 2007-05-15 | en |
dc.description.abstract | Epitaxial lead iron niobate thin films with thicknesses of 50 nm < t < 500 nm have been deposited by pulsed laser deposition. We have identified the deposition conditions that result in insulating layers. These critical conditions are essential to (i) prevent semiconducting resistivity characteristics, (ii) achieve higher induced polarizations of 70 mu C/cm(2) under E=190 kV/mm, and (iii) obtain remanent polarizations of 17.7 mu C/cm(2), coercive fields of 9.5 kV/mm, and dielectric constants of similar to 1200 at room temperature. (c) 2007 American Institute of Physics. | en |
dc.description.sponsorship | United States. Department of Energy - Contract No. DE-AC02-98CH10886 | en |
dc.description.sponsorship | United States. Air Force. Office of Scientific Research - FA 9550-06-1-0410 | en |
dc.format.extent | 6 pages | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Yan, Li, Li, Jiefang, Viehland, D. (2007). Deposition conditions and electrical properties of relaxor ferroelectric Pb(Fe1/2Nb1/2)O-3 thin films prepared by pulsed laser deposition. Journal of Applied Physics, 101(10). doi: 10.1063/1.2724592 | en |
dc.identifier.doi | https://doi.org/10.1063/1.2724592 | en |
dc.identifier.issn | 0021-8979 | en |
dc.identifier.uri | http://hdl.handle.net/10919/52431 | en |
dc.identifier.url | http://scitation.aip.org/content/aip/journal/jap/101/10/10.1063/1.2724592 | en |
dc.language.iso | en_US | en |
dc.publisher | American Institute of Physics | en |
dc.rights | In Copyright | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
dc.subject | Thin films | en |
dc.subject | Polarization | en |
dc.subject | Dielectric thin films | en |
dc.subject | Pulsed laser deposition | en |
dc.subject | Thin film deposition | en |
dc.title | Deposition conditions and electrical properties of relaxor ferroelectric Pb(Fe1/2Nb1/2)O-3 thin films prepared by pulsed laser deposition | en |
dc.title.serial | Journal of Applied Physics | en |
dc.type | Article - Refereed | en |
dc.type.dcmitype | Text | en |
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