Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires

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dc.contributor.authorCheng, Hongbinen
dc.contributor.authorLi, Jiaen
dc.contributor.authorWu, Dongxuen
dc.contributor.authorLi, Yanxien
dc.contributor.authorWang, Zhiguangen
dc.contributor.authorWang, Xianyingen
dc.contributor.authorZheng, Xuejunen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessioned2017-09-18T09:39:28Zen
dc.date.available2017-09-18T09:39:28Zen
dc.date.issued2015-08-12en
dc.date.updated2017-09-18T09:39:28Zen
dc.description.abstractGaN nanowires were synthesized through the Ni-catalyzed chemical vapor deposition (CVD) method using Ga2O3/GaN mixtures as gallium sources, and precursor-substrate distances were investigated as the important factor for the growth of GaN nanowires. The microstructure, composition, and photoluminescence property were characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra. The results showed that single crystalline GaN nanowires with the diameter of about 90 nm and the length up to tens of micrometers had been grown thickly across Si (100) substrates with uniform density. Moreover, the variations of the GaN nanowire morphology, density, and size were largely attributed to substrate positions which would influence Ga precursor density in the carrier gas, the saturation degree of gaseous reactants, and the catalyst activity, respectively, in the fabrication of GaN nanowires by the vapour liquid solid mechanism.en
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHongbin Cheng, Jia Li, Dongxu Wu, et al., “Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires,” Journal of Nanomaterials, vol. 2015, Article ID 343541, 6 pages, 2015. doi:10.1155/2015/343541en
dc.identifier.doihttps://doi.org/10.1155/2015/343541en
dc.identifier.urihttp://hdl.handle.net/10919/78946en
dc.language.isoenen
dc.publisherHindawien
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.holderCopyright © 2015 Hongbin Cheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleEffects of Precursor-Substrate Distances on the Growth of GaN Nanowiresen
dc.title.serialJournal of Nanomaterialsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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