Stress-controlled Pb(Zr0.52Ti0.48)O-3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O-3 film

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dc.contributorVirginia Tech. Department of Materials Science and Engineeringen
dc.contributorKorea Institute of Materials Science (KIMS). Functional Ceramics Departmenten
dc.contributorInha University. School of Materials Engineeringen
dc.contributor.authorHan, Guifangen
dc.contributor.authorRyu, Junghoen
dc.contributor.authorYoon, Woon-Haen
dc.contributor.authorChoi, Jong-Jinen
dc.contributor.authorHahn, Byung-Dongen
dc.contributor.authorKim, Jong-Wooen
dc.contributor.authorPark, Dong-Sooen
dc.contributor.authorAhn, Cheol-Wooen
dc.contributor.authorPriya, Shashanken
dc.contributor.authorJeong, Dae-Yongen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T19:47:30Zen
dc.date.available2015-05-21T19:47:30Zen
dc.date.issued2011-12-15en
dc.description.abstractPolycrystalline Pb(Zr0.52Ti0.48)O-3 (PZT) thick films (thickness similar to 10 mu m) were successfully fabricated by using a novel aerosol deposition technique on Si wafer, sapphire, and single crystal yitria stabilized zirconia (YSZ) wafer substrates with Pt electrodes and their dielectric, ferroelectric, and piezoelectric properties, and in-plane stresses were investigated. The films with different stress conditions were simply controlled by the coefficient of thermal expansion (CTE) misfit of PZT films and substrates. The results showed that the films bearing in-plane compressive stress deposited on the YSZ and sapphire substrates have superior dielectric, ferroelectric (similar to 90%), and piezoelectric (>200%) properties over that of the Si wafer. Among these three substrates, YSZ shows superior properties of the PZT films. However, films on Si wafer with tensile stress present lower properties. We believed that in-plane compressive stresses within the films are benefited, the formation of c-domain parallel to the thickness direction resulting in the higher piezoelectric properties. These results suggest that the properties of polycrystalline PZT thick films can be adjusted by simply choosing the substrates with different CTEs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669384]en
dc.description.sponsorshipKorea (South). Ministry of Knowledge Economy. Fundamental R&D Program for Core Technology of Materialsen
dc.format.extent6 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHan, Guifang, Ryu, Jungho, Yoon, Woon-Ha, Choi, Jong-Jin, Hahn, Byung-Dong, Kim, Jong-Woo, Park, Dong-Soo, Ahn, Cheol-Woo, Priya, Shashank, Jeong, Dae-Yong (2011). Stress-controlled Pb(Zr0.52Ti0.48)O-3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O-3 film. Journal of Applied Physics, 110(12). doi: 10.1063/1.3669384en
dc.identifier.doihttps://doi.org/10.1063/1.3669384en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52473en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/110/12/10.1063/1.3669384en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectPZT filmsen
dc.subjectThin filmsen
dc.subjectFerroelectric thin filmsen
dc.subjectPiezoelectric transducersen
dc.subjectSapphireen
dc.titleStress-controlled Pb(Zr0.52Ti0.48)O-3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O-3 filmen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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