Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

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dc.contributorVirginia Techen
dc.contributor.authorZhu, Y.en
dc.contributor.authorJain, N.en
dc.contributor.authorMohata, Dheeraj K.en
dc.contributor.authorDatta, Sumanen
dc.contributor.authorLubyshev, Dmitrien
dc.contributor.authorFastenau, Joel M.en
dc.contributor.authorLiu, A. K.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2014-01-10en
dc.date.accessioned2014-01-21T19:28:09Zen
dc.date.available2014-01-21T19:28:09Zen
dc.date.issued2012-09-01en
dc.description.abstractThe structural properties and band offset determination of p-channel staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to "virtual substrate." Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In0.7Ga0.3As/GaAs0.35Sb0.65 heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 +/- 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752115]en
dc.description.sponsorshipNational Science Foundation ECCS-1028494en
dc.description.sponsorshipIntel Corporationen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZhu, Y.; Jain, N.; Mohata, D. K.; et al., "Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure," Appl. Phys. Lett. 101, 112106 (2012); http://dx.doi.org/10.1063/1.4752115en
dc.identifier.doihttps://doi.org/10.1063/1.4752115en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/24963en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/101/11/10.1063/1.4752115en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectHeterojunctionsen
dc.subjectPhysicsen
dc.titleStructural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structureen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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