VTechWorks staff will be away for the Thanksgiving holiday beginning at noon on Wednesday, November 27, through Friday, November 29. We will resume normal operations on Monday, December 2. Thank you for your patience.
 

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Simple item page
dc.contributorVirginia Techen
dc.contributor.authorZhu, Y.en
dc.contributor.authorJain, N.en
dc.contributor.authorMohata, Dheeraj K.en
dc.contributor.authorDatta, Sumanen
dc.contributor.authorLubyshev, Dmitrien
dc.contributor.authorFastenau, Joel M.en
dc.contributor.authorLiu, A. K.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2014-01-10en
dc.date.accessioned2014-01-21T19:28:09Zen
dc.date.available2014-01-21T19:28:09Zen
dc.date.issued2012-09-01en
dc.description.abstractThe structural properties and band offset determination of p-channel staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to "virtual substrate." Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In0.7Ga0.3As/GaAs0.35Sb0.65 heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 +/- 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752115]en
dc.description.sponsorshipNational Science Foundation ECCS-1028494en
dc.description.sponsorshipIntel Corporationen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZhu, Y.; Jain, N.; Mohata, D. K.; et al., "Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure," Appl. Phys. Lett. 101, 112106 (2012); http://dx.doi.org/10.1063/1.4752115en
dc.identifier.doihttps://doi.org/10.1063/1.4752115en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/24963en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/101/11/10.1063/1.4752115en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectHeterojunctionsen
dc.subjectPhysicsen
dc.titleStructural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structureen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
1.4752115.pdf
Size:
1.27 MB
Format:
Adobe Portable Document Format
Description:
Main article
Download

Collections

Scholarly Works, Electrical and Computer Engineering