Structural origin of the 5.16-EV optical-absorption band in silica and GE-doped silica

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dc.contributorVirginia Techen
dc.contributor.authorTsai, Tsung-Einen
dc.contributor.authorFriebele, E. Josephen
dc.contributor.authorRajaram, M.en
dc.contributor.authorMukhapadhyay, S.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentFiber & ElectroOptics Research Center (FEORC)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:47Zen
dc.date.available2014-04-16T14:16:47Zen
dc.date.issued1994-03-01en
dc.description.abstractThe origin of the 5.16 eV absorption band observed in silica and Ge-doped silica was studied using optical and electron spin resonance (ESR) measurements. The band was observed only in samples containing Ge, suggesting that it is related to the Ge impurity in silica, while a lack of correlation between the ESR intensity of the induced hydrogen-associated doublet and the absorption coefficient of the 5.16 eV band indicates that it is not related to two-coordinated Si or Ge. The observation of the absorption coefficient increased as the square root of the Ge concentration demonstrates that the 5.16 eV band is not related to two-coordinated Ge defects but that it is an oxygen deficiency center of the divacancy type associated with Ge.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTsai, TE; Friebele, EJ; Rajaram, M; et al., "Structural origin of the 5.16-EV optical-absorption band in silica and GE-doped silica," Appl. Phys. Lett. 64, 1481 (1994); http://dx.doi.org/10.1063/1.111891en
dc.identifier.doihttps://doi.org/10.1063/1.111891en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47411en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/64/12/10.1063/1.111891en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectOxygen-deficient centersen
dc.subjectTwofold coordinated sien
dc.subjectGlassy SiO2en
dc.subjectDefectsen
dc.subjectLuminescenceen
dc.subjectVacancyen
dc.subjectAtomsen
dc.titleStructural origin of the 5.16-EV optical-absorption band in silica and GE-doped silicaen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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